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A Transistor that Stands Up to Blistering Nuclear Reactor Temperatures
Wonderful as silicon-based transistors are, they break down at temperatures above 350 °C. For higher-temperature environments, such as those found in jet engines and deep oil wells, researchers have had to turn to other options such as silicon carbide circuits, which can survive up to 550 °C.

Now, researchers at the University of Utah have made tiny plasma-based transistors that work at the blistering temperatures found inside nuclear reactors. While plasma transistors were first reported five years ago, the new devices are 500 times smaller than those early versions.

The new micro-plasma transistors work at temperatures of up to 790 °C. They could be used to make electronics for controlling robots that conduct tasks inside a nuclear reactor, says Massood Tabib-Azar, the professor of electrical and computer engineering at the University of Utah who developed the devices. Such extreme-temperature logic circuits could also control nuclear reactors in case of emergencies or nuclear attacks. Tabib-Azar and his postdoctoral researcher, Pradeep Pai, reported the plasma transistors online today in the journal IEEE Electron Device Letters.

Jutt edasi lingil:
http://spectrum.ieee.org/tech-talk/semiconductors/devices/a-transistor-for-blistering-nuclear-reactor-temperatures